U.S. scientists say a new method of modifying graphene, a material with exceptional strength and conductivity, could mean faster, thinner, flexible electronics. Many researchers believe the one-atom thick, honeycomb-shaped lattice of carbon could rival silicon in transforming integrated circuits and could lead to ultra-fast computers, cellphones and related portable electronic devices. One hurdle facing scientists is that unlike semiconductors such as silicon, pure graphene is a so-called \"zero band-gap\" material, making it difficult to electrically \"turn off\" the flow of current passing through it. Researchers at Northwestern University have developed a method to turn pristine graphene into graphene oxide to overcome this problem. \"Performing chemical reactions on graphene is very difficult,\" materials science professor Mark C. Hersam said in a university release. \"Typically, researchers employ aggressive acidic conditions ... that damage the lattice and result in a material that is difficult to control.\" Researchers have developed a technique to uniformly insert highly reactive oxygen atoms into the graphene lattice. \"In our method ... the resulting graphene oxide is chemically homogeneous and reversible -- leading to well-controlled properties that can likely be exploited in high-performance applications\" and graphene-based devices, Hersam said.